深圳市英特瑞斯电子有限公司

Factory Pack Quantity30Vds - Drain-Source Breakdown Voltage650 VTransistor PolarityN-Channel高度5.3mmPackage / CaseTO-247-3Vgs th - Gate-Source Threshold Voltage2.7 V晶体管材料SiQg - Gate Charge56 nCVgs - Gate-Source Voltage30 V类别功率 MOSFET长度16.24mmFall Time16 ns典型输入电容值@Vds3230 pF @ 25 V系列HiperFET, X2-Class通道模式增强BrandIXYS安装类型通孔Mounting StyleThrough HoleNumber of Channels1 Channel每片芯片元件数目1漏源电阻值0.1 Ω引脚数目3Maximum Operating Temperature+ 150 CId - Continuous Drain Current34 ABoard Level ComponentsYMinimum Operating Temperature- 55 C工作温度+150 °CForward Transconductance - Min14 S通道类型N工作温度-55 °CPd - Power Dissipation540 W功率耗散540 W栅源电压±30 V宽度21.45mm尺寸16.24 x 21.45 x 5.3mmRds On - Drain-Source Resistance105 mOhms正向二极管电压1.4VRoHSRoHS Compliant栅阈值电压2.7V漏源电压650 VConfigurationSingleTypical Turn-Off Delay Time47 nsChannel ModeEnhancement典型接通延迟时间37 ns典型关断延迟时间64 nsPackagingTubeTypical Turn-On Delay Time46 ns封装类型TO-247连续漏极电流34 A栅阈值电压5V正向跨导20S晶体管配置单Rise Time45 nsTechnologySi典型栅极电荷@Vgs56 nC @ 10 V