深圳市英特瑞斯电子有限公司

The S29GL128P10FFI010 is a 128MB page mode Flash Memory featuring 90nm MirrorBit process technology. This device offers a fast page access time of 100ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.Highest address sector protectedEnhanced Versatile I/O™ controlSecured silicon sector regionCan be programmed and locked at the factory or by the customer100000 Erase cycles per sector typical20 Years data retention typicalSuspend and resume commands for program and erase operationsWrite operation status bits indicate program and erase operation completionUnlock bypass program command - Reduces programming timeSupport for CFI (Common Flash Interface)Persistent and password methods of advanced sector protectionWA#/ACC input - Protects first or last sector regardless of sector protection settingsHardware reset input (RESET#) resets deviceReady/busy# output (RY/BY#) detects program or erase cycle completion